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Thin films of In2O3 by atomic layer deposition using In(acac)3

Identifieur interne : 004908 ( Main/Repository ); précédent : 004907; suivant : 004909

Thin films of In2O3 by atomic layer deposition using In(acac)3

Auteurs : RBID : Pascal:09-0441229

Descripteurs français

Pascal (Inist)
- Couche mince, Méthode couche atomique, Croissance cristalline en phase vapeur, Précurseur, Mécanisme croissance, Dépendance température, Taux croissance, Oxyde d'indium, In2O3, 8115K, 6855A.

English descriptors

KwdEn :
- Atomic layer method, Crystal growth from vapors, Growth mechanism, Growth rate, Indium oxide, Precursor, Temperature dependence, Thin films.

Abstract

Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In (acac)₃ (acac = acetylacetonate, pentane-2,4-dione) and either H₂O or 0₃ as precursors. Successful growth using In(acac)₃ is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 °C for In(acac)₃ and H₂O, 165-225 °C for In(acac)₃ and 0₃. The growth rates obtained are of the order 20 pm/cycle for In(acac)₃ and H₂O,12 pm/cycle for In(acac)₃.

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Pascal:09-0441229

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thin films of In<sub>2</sub>
O<sub>3</sub>
 by atomic layer deposition using In(acac)<sub>3</sub>
</title>
<author><name sortKey="Nilsen, O" uniqKey="Nilsen O">O. Nilsen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Chemistry University of Oslo, P.B. 1033 Blindern</s1>
<s2>Oslo 0315</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Oslo 0315</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Balasundaraprabhu, R" uniqKey="Balasundaraprabhu R">R. Balasundaraprabhu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Physics, University of Oslo, P.B. 1048, Blindem</s1>
<s2>Oslo 0316</s2>
<s3>NOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Oslo 0316</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Monakhov, E V" uniqKey="Monakhov E">E. V. Monakhov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Physics, University of Oslo, P.B. 1048, Blindem</s1>
<s2>Oslo 0316</s2>
<s3>NOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Oslo 0316</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Muthulcumarasamy, N" uniqKey="Muthulcumarasamy N">N. Muthulcumarasamy</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Coimbatore Institute of Technology</s1>
<s2>Coimbatore</s2>
<s3>IND</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Coimbatore</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Fjellvag, H" uniqKey="Fjellvag H">H. Fjellvag</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Chemistry University of Oslo, P.B. 1033 Blindern</s1>
<s2>Oslo 0315</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Oslo 0315</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Svensson, B G" uniqKey="Svensson B">B. G. Svensson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Physics, University of Oslo, P.B. 1048, Blindem</s1>
<s2>Oslo 0316</s2>
<s3>NOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Oslo 0316</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">09-0441229</idno>
<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 09-0441229 INIST</idno>
<idno type="RBID">Pascal:09-0441229</idno>
<idno type="wicri:Area/Main/Corpus">004E83</idno>
<idno type="wicri:Area/Main/Repository">004908</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic layer method</term>
<term>Crystal growth from vapors</term>
<term>Growth mechanism</term>
<term>Growth rate</term>
<term>Indium oxide</term>
<term>Precursor</term>
<term>Temperature dependence</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Méthode couche atomique</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Précurseur</term>
<term>Mécanisme croissance</term>
<term>Dépendance température</term>
<term>Taux croissance</term>
<term>Oxyde d'indium</term>
<term>In2O3</term>
<term>8115K</term>
<term>6855A</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In (acac)<sub>3</sub>
 (acac = acetylacetonate, pentane-2,4-dione) and either H<sub>2</sub>
O or 0<sub>3</sub>
 as precursors. Successful growth using In(acac)<sub>3</sub>
 is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 °C for In(acac)<sub>3</sub>
 and H<sub>2</sub>
O, 165-225 °C for In(acac)<sub>3</sub>
 and 0<sub>3</sub>
. The growth rates obtained are of the order 20 pm/cycle for In(acac)<sub>3</sub>
 and H<sub>2</sub>
O,12 pm/cycle for In(acac)<sub>3</sub>
.</div>
</front>
</TEI>
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</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
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</fA03>
<fA05><s2>517</s2>
</fA05>
<fA06><s2>23</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Thin films of In<sub>2</sub>
O<sub>3</sub>
 by atomic layer deposition using In(acac)<sub>3</sub>
</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings on the Sixth Symposium on Thin Films for Large Area Electronics</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>NILSEN (O.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BALASUNDARAPRABHU (R.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MONAKHOV (E. V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MUTHULCUMARASAMY (N.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>FJELLVAG (H.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SVENSSON (B. G.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>SCHROPP (Ruud E.I.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>ROCA I CABARROCAS (Pere)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Chemistry University of Oslo, P.B. 1033 Blindern</s1>
<s2>Oslo 0315</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centre for Materials Science and Nanotechnology (SMN), Department of Physics, University of Oslo, P.B. 1048, Blindem</s1>
<s2>Oslo 0316</s2>
<s3>NOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Physics, Coimbatore Institute of Technology</s1>
<s2>Coimbatore</s2>
<s3>IND</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Utrecht University, Faculty of Science, Department of Physics and Astronomy, Debye Institute for Nanomaterials Science, Section Nanophotonics, P.O. Box 80.000</s1>
<s2>3508 TA Utrecht</s2>
<s3>NLD</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique</s1>
<s2>91128 Palaiseau</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>6320-6322</s1>
</fA20>
<fA21><s1>2009</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000187622530240</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>12 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>09-0441229</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In (acac)<sub>3</sub>
 (acac = acetylacetonate, pentane-2,4-dione) and either H<sub>2</sub>
O or 0<sub>3</sub>
 as precursors. Successful growth using In(acac)<sub>3</sub>
 is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 °C for In(acac)<sub>3</sub>
 and H<sub>2</sub>
O, 165-225 °C for In(acac)<sub>3</sub>
 and 0<sub>3</sub>
. The growth rates obtained are of the order 20 pm/cycle for In(acac)<sub>3</sub>
 and H<sub>2</sub>
O,12 pm/cycle for In(acac)<sub>3</sub>
.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15K</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Méthode couche atomique</s0>
<s5>02</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Atomic layer method</s0>
<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Précurseur</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Precursor</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Taux croissance</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Growth rate</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>8115K</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fN21><s1>320</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS 2008 Spring Meeting. Symposium on Thin Films for Large Area Electronics.</s1>
<s3>Strasbourg FRA</s3>
<s4>2008-05-26</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Thin films of In2O3 by atomic layer deposition using In(acac)3

Thin films of In2O3 by atomic layer deposition using In(acac)3

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri